Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
Date
2006-05
Authors
McDonald, James Steven
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Abstract
In this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer.
Description
Keywords
plasma etching, diffusion, silicon carbonitride, titanium nitride, tetrafluoroethane, oxygen plasma
Citation
McDonald, J. S. (2006). Reactive plasma etching of silicon carbide, silicon carbonitride, and titanium nitride in a tetrafluoroethane/oxygen plasma (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.
McDonald, J. S. (2006). Reactive plasma etching of silicon carbide, silicon carbonitride, and titanium nitride in a tetrafluoroethane/oxygen plasma (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.
McDonald, J. S. (2006). Reactive plasma etching of silicon carbide, silicon carbonitride, and titanium nitride in a tetrafluoroethane/oxygen plasma (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.